Kingston Technology 4GB DDR3L-1600MHz Server Premier KVR16LE11S8/4HB 产品宣传页
产品代码
KVR16LE11S8/4HB
KVR16LE11S8/4HB
4GB 1Rx8 512M x 72-Bit PC3L-12800
CL11 240-Pin ECC DIMM
CL11 240-Pin ECC DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, ECC,
low voltage, memory module, based on nine 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
240-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
•
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
•
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
•
800MHz fCK for 1600Mb/sec/pin
•
8 independent internal bank
•
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Thermal Sensor Grade B
•
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB: Height 1.18” (30mm), single sided component
Document No. VALUERAM1457-001.A00 11/25/14 Page 1
Memory Module Specifi cations
Continued >>
SPECIFICATIONS
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1
1
)
D
D
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L
C
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
35ns (min.)
Maximum Operating Power
(1.35V) = 1.458 W*
0
-
V
4
9
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R
L
U
Operating Temperature
0
o
C to 85
o
C
Storage Temperature
-55
o
C to +100
o
C
SDRAM SUPPORTED
Hynix B-Die