Bourns PROT-OVER VOLT/TISP61521DR-S/8-SOIC TISP61521DR-S 数据表

产品代码
TISP61521DR-S
下载
页码 5
JULY 2010 - REVISED MAY 2012
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
MDRXAN
1
2
3
4
5
6
7
8
K2
A
A
K4
G1,G2
K1
K3
G3,G4
SDRXAIA
K1
K3
K4
K2
G3,G4
A
A
G1,G2
 
      
TISP61089QB SLIC Overvoltage Protector
 TISP61089QB
PROGRAMMABLE OVERVOLTAGE PROTECTOR
QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
Quad Voltage-Programmable Protector
- Wide -20 V to -155 V Programming Range
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
- Rated for ITU-T and YD/T-950 10/700 impulses
- Rated for Telcordia Intra-building impulses
10/700 Protection Voltage Specifi ed
Bourns
®
 TISP61089QB is a quad forward-conducting buffered p-gate 
overvoltage protector. It is designed to protect monolithic SLICs 
(Subscriber Line Interface Circuits) against overvoltages on the tele-
phone line caused by lightning, a.c. power contact and induction. The 
TISP61089QB limits voltages that exceed the SLIC supply rail voltage. 
The TISP61089QB parameters are specifi ed to allow equipment compli-
ance with Telcordia GR-1089-CORE Intra-building, ITU-T K.20, K.21 and 
K.45 and YD/T-950.
The SLIC line driver section is typically powered from 0 V (ground) and a 
negative voltage in the region of -20 V to -155 V. The protector gate is
connected to this negative supply. This references the protection 
(clipping) voltage to the negative supply voltage. As the protection 
voltage will then track the negative supply voltage the overvoltage stress 
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. 
*RoHS COMPLIANT
D Package (Top View)
Device Symbol
Description
on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. 
Negative overvoltages are initially clipped close to the SLIC negative supply 
rail value. If suffi cient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the 
overvoltage subsides, the high holding current of the crowbar helps prevent d.c. latchup. 
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually 
transparent in normal operation. The TISP61089QB buffered gate design reduces the loading on the SLIC supply during overvoltages caused 
by power cross and induction. The TISP61089QB is available in an 8-pin plastic small-outline surface mount package.
How to Order
Element
40 A, 5/310
Protection Level
Diode
+12
Crowbar
V
GG
 = -48 V
-64
Device
Package
Carrier
TI
8 Pin Small Outline (D008)
SP61089QB
Embossed Tape Reeled
TISP61089QBDR-S
Order As
1089QB
Marking Code
2500
Standard Quantity