Texas Instruments LM4953 Evaluation Board LM4953SDBD/NOPB LM4953SDBD/NOPB 数据表
产品代码
LM4953SDBD/NOPB
SNAS299E – SEPTEMBER 2005 – REVISED FEBRUARY 2006
PIN DESCRIPTIONS
Pin
Name
Function
1
SD
Active Low Shutdown
2
CP
VDD
Charge Pump Power Supply
3
CCP+
Positive Terminal - Charge Pump Flying
Capacitor
Capacitor
4
PGND
Power Ground
5
CCP-
Negative Terminal - Charge Pump Flying
Capacitor
Capacitor
6
V
CP_OUT
Charge Pump Output
7
NC
No Connect
8
AV
SS
Negative Power Supply - Amplifier
9
OUT B
Output B
10
AV
DD
Positive Power Supply - Amplifier
11
OUT A
Output A
12
NC
No Connect
13
V
IN
Signal Input
14
SGND
Signal Ground
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2) (3)
Supply Voltage (V
DD
)
4.5V
Storage Temperature
−
65°C to +150°C
Input Voltage
-0.3V to V
DD
+ 0.3V
Power Dissipation
(4)
Internally Limited
ESD Susceptibility
(5) (6)
2000V
ESD Susceptibility
(7) (6)
200V
Junction Temperature
150°C
Thermal Resistance
See AN-1187(
'Leadless Leadframe Packaging (LLP).'
(1)
All voltages are measured with respect to the GND pin unless otherwise specified.
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions that ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given; however, the typical value is a good indication
of device performance.
which the device is functional but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions that ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given; however, the typical value is a good indication
of device performance.
(3)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
specifications.
(4)
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
JMAX
,
θ
JA
, and the ambient temperature,
T
A
. The maximum allowable power dissipation is P
DMAX
= (T
JMAX
– T
A
)/
θ
JA
or the number given in Absolute Maximum Ratings,
whichever is lower. For the LM4xxx typical application (shown in
) with V
DD
= yyV, R
L
= 2
μ
F+30
Ω
mono BTL operation the total
power dissipation is xxxW.
θ
JA
= 40°C/W.
(5)
Human body model, 100pF discharged through a 1.5k
Ω
resistor.
(6)
If the product is in shutdown mode and V
DD
exceeds 3.6V (to a max of 4V V
DD
), then most of the excess current will flow through the
ESD protection circuits. If the source impedance limits the current to a max of 10mA, then the part will be protected. If the part is
enabled when V
enabled when V
DD
is above 4V, circuit performance will be curtailed or the part may be permanently damaged.
(7)
Machine Model, 220pF-240pF discharged through all pins.
Operating Ratings
Temperature Range
T
MIN
≤
T
A
≤
T
MAX
−
40°C
≤
T
A
≤
85°C
Supply Voltage (V
DD
)
1.6V
≤
V
DD
≤
4.2V
Copyright © 2005–2006, Texas Instruments Incorporated
3
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