Texas Instruments IC MCU 16B MSP430F2013TPW TSSOP-14 TID MSP430F2013TPW 数据表
产品代码
MSP430F2013TPW
MSP430F20x3
MSP430F20x2
MSP430F20x1
MSP430F20x2
MSP430F20x1
SLAS491I – AUGUST 2005 – REVISED DECEMBER 2012
SD16_A, Temperature Sensor
(1)
(MSP430F20x3)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
TC
Sensor
Sensor temperature coefficient
1.18
1.32
1.46 mV/°C
V
Offset,Sensor
Sensor offset voltage
-100
100
mV
Temperature sensor voltage at
435
475
515
T
A
= 85°C
Temperature sensor voltage at
V
Sensor
Sensor output voltage
(2)
3 V
355
395
435
mV
T
A
= 25°C
Temperature sensor voltage at
320
360
400
T
A
= 0°C
(1)
Values are not based on calculations using TC
Sensor
or V
Offset,sensor
but on measurements.
(2)
The following formula can be used to calculate the temperature sensor output voltage:
V
V
Sensor,typ
= TC
Sensor
( 273 + T [°C] ) + V
Offset,sensor
[mV] or
V
Sensor,typ
= TC
Sensor
T [°C] + V
Sensor
(T
A
= 0°C) [mV]
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER
V
CC
MIN
TYP
MAX
UNIT
CONDITIONS
V
CC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
f
FTG
Flash timing generator frequency
257
476
kHz
I
PGM
Supply current from V
CC
during program
2.2 V/3.6 V
1
5
mA
I
ERASE
Supply current from V
CC
during erase
2.2 V/3.6 V
1
7
mA
t
CPT
Cumulative program time
(1)
2.2 V/3.6 V
10
ms
t
CMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
10
4
10
5
cycles
t
Retention
Data retention duration
T
J
= 25°C
100
years
t
Word
Word or byte program time
(2)
30
t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25
t
FTG
Block program time for each additional byte or
t
Block, 1-63
(2)
18
t
FTG
word
t
Block, End
Block program end-sequence wait time
(2)
6
t
FTG
t
Mass Erase
Mass erase time
(2)
10593
t
FTG
t
Seg Erase
Segment erase time
(2)
4819
t
FTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the Flash Controller's state machine (t
FTG
= 1/f
FTG
).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
(RAMh)
RAM retention supply voltage
(1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage V
CC
when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright © 2005–2012, Texas Instruments Incorporated
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