Microchip Technology MCP6031DM-PTPLS 数据表
© 2008 Microchip Technology Inc.
DS22041B-page 5
MCP6031/2/3/4
TEMPERATURE SPECIFICATIONS
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
shown in
. The bypass
capacitors are laid out according to the rules discussed
in
in
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Temperature Range
T
A
-40
—
+125
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
Thermal Resistance, 8L-DFN (2x3)
θ
JA
—
84
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—
206
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note:
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
V
DD
MCP603X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
2.2 µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP603X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
2.2 µF
C
L
R
L
V
L
0.1 µF