Freescale Semiconductor DEMO9S08DZ60 Demo Board DEMO9S08DZ60 DEMO9S08DZ60 数据表
产品代码
DEMO9S08DZ60
Chapter 4 Memory
MC9S08DZ60 Series Data Sheet, Rev. 4
56
Freescale Semiconductor
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in
.
Figure 4-3. Burst Program Flowchart
1
0
FCBEF?
START
WRITE TO Flash
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
NO
YES
FPVIOL OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF
(2)
NO
YES
NEW BURST COMMAND?
1
0
FCCF?
ERROR EXIT
DONE
(2)
Wait at least four bus cycles
before checking FCBEF or FCCF.
1
0
FACCERR?
CLEAR ERROR
FACCERR?
WRITE TO FCDIV
(1)
(1)
Required only once
after reset.
BURST PROGRAM
FLOW
FLOW