Freescale Semiconductor Demonstration Board for Freescale MC9S12XHY256 Microcontroller DEMO9S12XHY256 DEMO9S12XHY256 用户手册
产品代码
DEMO9S12XHY256
MC9S12XHY-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
568
Preliminary
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Each P-Flash sector contains 1024 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
18.1.2
Features
18.1.2.1
P-Flash Features
•
256 Kbytes of P-Flash memory composed of one 256 Kbyte Flash block divided into 256 sectors
of 1024 bytes
of 1024 bytes
•
Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and phrase program operation
•
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
18.1.2.2
D-Flash Features
•
8 Kbytes of D-Flash memory composed of one 8 Kbyte Flash block divided into 32 sectors of 256
bytes
bytes
•
Single bit fault correction and double bit fault detection within a word during read operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and word program operation
•
Protection scheme to prevent accidental program or erase of D-Flash memory
•
Ability to program up to four words in a burst sequence