Freescale Semiconductor Tower System Module S12G240 TWR-S12G240 TWR-S12G240 数据表

产品代码
TWR-S12G240
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页码 1292
128 KByte Flash Module (S12FTMRG128K1V1)
MC9S12G Family Reference Manual,
Rev.1.23
1080
Freescale Semiconductor
29.4.6.15 Program EEPROM Command
The Program EEPROM operation programs one to four previously erased words in the EEPROM block.
The Program EEPROM operation will confirm that the targeted location(s) were successfully programmed
upon completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Upon clearing CCIF to launch the Program EEPROM command, the user-supplied words will be
transferred to the Memory Controller and be programmed if the area is unprotected. The CCOBIX index
value at Program EEPROM command launch determines how many words will be programmed in the
EEPROM block. The CCIF flag is set when the operation has completed.
Table 29-61. Erase Verify EEPROM Section Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see
)
Set if an invalid global address [17:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the EEPROM block
FPVIOL
None
MGSTAT1
Set if any errors have been encountered during the read or if blank check failed.
MGSTAT0
Set if any non-correctable errors have been encountered during the read or if
blank check failed.
Table 29-62. Program EEPROM Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x11
Global address [17:16] to
identify the EEPROM block
001
Global address [15:0] of word to be programmed
010
Word 0 program value
011
Word 1 program value, if desired
100
Word 2 program value, if desired
101
Word 3 program value, if desired