Fairchild Semiconductor N/A BCV26 数据表



1997 Fairchild Semiconductor Corporation

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

TA = 25°C unless otherwise noted

This device is designed for applications requiring extremely high
current gain at currents to 800 mA.  Sourced from Process 61.

V

CEO

Collector-Emitter Voltage

30

V

V

CBO

Collector-Base Voltage

40

V

V

EBO

Emitter-Base Voltage

10

V

I

C

Collector Current - Continuous

1.2

A

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

P

D

Total Device Dissipation

Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

*

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.