Fairchild Semiconductor N/A BCP68 数据表

©2001 Fairchild Semiconductor Corporation

Rev. A, August 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

V

CEO

Collector-Emitter Voltage

20

V

V

CBO

Collector-Base Voltage

30

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

1

A

P

D

Total Device Dissipation
 - Derate above 25

°

C

@ T

A

=25

°

C

1.5

12

Watts

mW/

°

C

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ +150

°

C

V

(BR)CES

Collector-Emitter Breakdown Voltage 

I

C

 = 100

µ

A, I

E

 = 0

25

V

V

(BR)CEO

Collector-Emitter Breakdown Voltage 

I

C

 = 1mA, I

B

 = 0

20

V

V

(BR)EBO

Emitter-Base Breakdown Voltage 

I

E

 = 10

µ

A, I

C

 = 0

5

V

I

CBO

Collector-Base Cutoff Current

V

CB

 = 25V, I

E

 = 0, T

A

 = 25

°

C

V

CB

 = 25V, I

E

 = 0, T

A

 = 125

°

C

10

1

µ

A

mA

I

EBO

Emitter-Base Cutoff Current

V

EB

 = 5V, I

C

 = 0

10

µ

A

h

FE

DC Current Gain 

I

C

 = 5mA, V

CE

 = 10V

I

C

 = 500mA, V

CE

 = 1V

I

C

 = 1A, V

CE

 = 1V

50
85
60

375

V

CE(sat)

Collector-Emitter Saturation Voltage 

I

C

 = 1A, I

B

 = 100mA

0.5

V

V

BE(on)

Base-Emitter On Voltage

I

C

 = 1A, V

CE

 = 1V

1

V

• This device is designed for general purpose medium power amplifiers.
• Sourced from process 37.

SOT-223

1. Base   2.4. Collector  3. Emitter 

1

2

4

3