Fairchild Semiconductor N/A BCW66G 数据表
产品代码
BCW66G
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BCW66G
Absolute Maximum Ratings *
T
C
=25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CBO
Collector-Base Voltage
75
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
- Continuous
1
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
- 55 ~ +150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A
75
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA
45
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A
5
V
I
CES
Collector Cut-off Current
V
CB
= 45V, I
E
= 0
V
CB
= 45V, I
E
= 0
T
A
= 150
°
C
20
nA
20
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 4V
20
nA
h
FE
DC Current Gain
V
CE
= 10V, I
C
= 100
µ
A
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
50
110
160
160
60
400
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
0.3
0.7
0.7
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
2
V
C
obo
Output Capacitance
V
CB
= 10V, f = 1MHz
12
pF
C
ibo
Input Capacitance
V
EB
= 0.5V, f = 1MHz
80
pF
f
T
Current gain Bandwidth Product
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
100
MHz
NF
Noise Figure
V
CE
= 5V, I
C
= 0.2mA, R
S
= 1k
Ω
,
f = 1KHz, BW = 200Hz
10
dB
t
on
Turn-On Time
I
B1
= I
B2
= 15mA
I
C
= 150mA, R
L
= 150
Ω
100
ns
t
off
Turn-Off Time
400
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: EG