Fairchild Semiconductor N/A KSH117TF 数据表

©2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

- 100

V

 V

CEO

 Collector-Emitter Voltage

- 100

V

 V

EBO

 Emitter-Base Voltage

  - 5

V

 I

C

 Collector Current (DC)

  - 2

A

 I

CP

 Collector Current (Pulse)

  - 4 

A

 I

B

 Base Current

 - 50

mA

 P

C

 Collector Dissipation (T

C

=25

°

C)

  20

W

 Collector Dissipation (T

a

=25

°

C)

1.75

W

 T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

 (sus)

 *Collector-Emitter Sustaining Voltage

 I

C 

= - 30mA, I

B 

= 0

- 100

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= - 50V, I

B 

= 0

 - 20

µ

A

 I

CBO

 Collector Cut-off Current

 V

CB 

= - 100V, I

E 

= 0

 - 20

µ

A

 I

EBO

 Emitter Cut-off Current

 V

EB 

= - 5V, I

C 

= 0

  - 2

mA

 h

FE

 *DC Current Gain

 V

CE 

= - 3V, V

EB 

= - 0.5A

 V

CE 

= - 3V, V

EB 

= - 2A

 V

CE 

= - 3V, I

C 

= - 4A

 500

1000

 200

12K

 V

CE

(sat)

*Collector-Emitter Saturation Voltage

 I

C 

= -2A, I

B 

= - 8mA

 I

C 

= - 4A, I

B 

= - 40mA

  - 2
  - 3

V
V

 V

BE

(sat)

*Base-Emitter Saturation Voltage

 I

C 

= - 4A, I

B 

= - 40mA

  - 4

V

 V

BE

(on)

*Base-Emitter On Voltage

 V

CE 

= - 3A, I

C 

= - 2A

- 2.8

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= -10V, I

C 

= - 0.75A

  25

MHz

 

C

ob

 

 Output Capacitance

 V

CB 

= - 10V, I

E 

= 0

 f= 0.1MHz

 200

pF

• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117

R1

10

k

Ω

≅

R2

0.6

k

Ω

≅

Equivalent Circuit

B

E

C

R1

R2

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1