Rohm Semiconductor UMH4NTN Bipolar Transistor Emitter reverse voltage U(CEO) 50 V UMH4NTN 数据表
产品代码
UMH4NTN
EMH4 / UMH4N / IMH4A
! !
Transistors
Rev.A
2/2
zElectrical characteristics (Ta=25
qC)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
50
50
5
−
−
−
−
−
−
100
−
−
−
−
−
−
−
−
−
−
−
−
250
−
250
−
−
−
−
−
0.5
0.5
0.3
600
−
V
V
V
μA
μA
μA
V
−
MHz
∗
R
1
7
10
13
k
Ω
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
V
CE
=10V, I
E
= −5mA, f=100MHz
I
C
/I
B
=10mA/1mA
V
CE
=5V, I
C
=1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
zElectrical characteristics curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
100
μ 200μ 500μ 1m 2m
5m 10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
V
CE
=5V
Ta
=100°C
25
°C
−40°C
Fig.1 DC current gain vs. collector
current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
100
μ 200μ 500μ 1m 2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
C
/l
B
=10
Ta
=100°C
25
°C
−40°C
Fig.2 Collector-emitter saturation
voltage vs. collector current