Fairchild Semiconductor N/A KSC3265YMTF 数据表
产品代码
KSC3265YMTF
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC326
5
1
2
3
SOT-23
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
∗
Refer to KSD261 for graphs
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
800
mA
I
B
Base Current
160
mA
P
C
Collector Power Dissipation
200
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
25
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=1mA, I
C
=0
5
V
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
100
nA
h
FE1
h
FE2
DC Current Gain
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=800mA
100
40
320
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=20mA
0.4
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=1V, I
C
=10mA
0.5
0.8
V
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA
120
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
13
pF
Classification O
Y
h
FE
100 ~ 200
160 ~ 320
1. Base 2. Emitter 3. Collector
KSC3265
Low Frequency Amplifier
• Complement to KSA1298
K 1 O
Marking
h
FE
grade