Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX 数据表

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.

V

CESM

Collector-emitter voltage peak value

V

BE

 = 0 V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

8

A

P

tot

Total power dissipation

T

hs

 

≤

 25 ˚C

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

C

 = 3.0 A; I

B

 = 0.79 A

-

5

V

I

Csat

Collector saturation current

3.0

-

A

V

F

Diode forward voltage

I

F

 = 3.0 A

1.6

2.0

V

t

f

Fall time

I

Csat

 = 3.0 A; I

B(end)

 = 0.67 A

0.25

0.5

µ

s

1

base

2

collector

3

emitter

case isolated

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

V

CESM

Collector-emitter voltage peak value

V

BE

 = 0 V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

8

A

I

B

Base current (DC)

-

3

A

I

BM

Base current peak value

-

5

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

100

mA

-I

BM

Reverse base current peak value 

1

-

4

A

P

tot

Total power dissipation

T

hs

 

≤

  25 ˚C

-

45

W

T

stg

Storage temperature

-55

150

˚C

T

j

Junction temperature

-

150

˚C

case

1 2 3

b

c

e

Rbe

1 Turn-off current.

September 1997

1

Rev 2.400