Infineon Technologies N/A BCR 48PN NPN / PNP Case type SOT 363 BCR48PN 数据表
产品代码
BCR48PN
2011-07-28
2
BCR48PN
Thermal Resistance
Junction - soldering point
Junction - soldering point
1)
R
thJS
≤ 140
K/W
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
50
-
-
Collector cutoff current
V
V
CB
= 40 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter cutoff current
V
V
EB
= 10 V, I
C
= 0
I
EBO
-
-
164
µA
DC current gain 2)
I
I
C
= 5 mA, V
CE
= 5 V
h
FE
70
-
-
-
Collector-emitter saturation voltage2)
I
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.8
-
1.5
Input on Voltage
I
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
1
-
3
Input resistor
R
1
32
47
62
k
Ω
Resistor ratio
R
1
/R
2
0.9
1
1.1
-
AC Characteristics for NPN Type
Transition frequency
I
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
100
-
MHz
Collector-base capacitance
V
V
CB
= 10 V, f = 1 MHz
C
cb
-
3
-
pF
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2) Pulse test: t < 300
µs; D < 2%