Nxp Semiconductors BU2522AX BU Transistor NPN SOT 399 (TOP 3D) 10A 800V BU2522AX 数据表
产品代码
BU2522AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AX
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses. T
j
= 85˚C
Poff = f (I
B
); parameter I
C
= 6 A; f = 64 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
= 6A; T
j
= 85˚C;
f = 64 kHz
0.01
0.1
1
10
100
IC / A
BU2522A
100
10
1
h
FE
Tj = 25 C
Tj = -40 C
Tj = 85 C
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
IB / A
1.2
1.1
1
0.9
0.8
0.7
0.6
BU2522A
VBESAT / V
Tj = 25 C
Tj = 85 C
IC =
7A
6A
5A
7A
6A
5A
BU2522AF/DF/AX/DX
0
0.5
1
1.5
2
1
10
100
IB / A
PTOT / W
Ths = 25 C
Ths = 85 C
Ths = 85 C
0.1
1
10
IC / A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBESAT / V
BU2522A
Tj = 25 C
Tj = 85 C
IC/IB =
3
5
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IB / A
ts, tf / us
BU2522AF
4
3.5
3
2.5
2
1.5
1
0.5
0
IC =
6A
5A
0.1
10
IC / A
VCESAT / V
10
1
0.1
0.01
100
1
BU2522A
Tj = 25 C
Tj = 85 C
IC/IB =
3
5
September 1997
4
Rev 2.300