Nxp Semiconductors BU2720DX BU Transistor NPN SOT 399 (TOP 3D) 10A 825V BU2720DX 数据表

产品代码
BU2720DX
下载
页码 8
Philips Semiconductors
Product specification
 Silicon Diffused Power Transistor
BU2720DX 
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand V
CES
 pulses up
to 1700V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
 = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
hs
 
 25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
 = 5.5 A; I
B
 = 1.38 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
5.5
-
A
t
s
Storage time
I
Csat
 = 5.5 A; f = 16kHz
7.4
8.5
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
 = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
10
A
I
BM
Base current peak value
-
14
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value 
1
-
6
A
P
tot
Total power dissipation
T
hs
 
  25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
Ω
)
case
1 2 3
b
c
e
Rbe
Turn-off current.
September 1997
1
Rev 1.300