Infineon Technologies N/A BCX 53-16 PNP Case type SOT 89 I(C BCX53-16 数据表
产品代码
BCX53-16
2011-07-29
3
BCX51...-BCX53...
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BCX51
I
C
= 10 mA, I
B
= 0 , BCX52
I
C
= 10 mA, I
B
= 0 , BCX53
V
(BR)CEO
45
60
80
60
80
-
-
-
-
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 100 µA, I
E
= 0 , BCX51
I
C
= 100 µA, I
E
= 0 , BCX52
I
C
= 100 µA, I
E
= 0 , BCX53
V
(BR)CBO
45
60
60
100
-
-
-
-
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.1
20
µA
DC current gain
1)
I
C
= 5 mA, V
CE
= 2 V
I
C
= 150 mA, V
CE
= 2 V, BCX51...BCX53
I
C
= 150 mA, V
CE
= 2 V, BCX53-10
I
C
= 150 mA, V
CE
= 2 V, BCX51-16...BCX53-16
I
C
= 500 mA, V
CE
= 2 V
h
FE
25
40
63
40
63
100
25
-
-
-
100
160
160
-
-
250
160
250
160
250
-
-
Collector-emitter saturation voltage
1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage
1)
I
C
= 500 mA, V
CE
= 2 V
V
BE(ON)
-
-
1
AC Characteristics
Transition frequency
I
Transition frequency
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
f
T
-
125
-
MHz
1
Pulse test: t < 300µs; D < 2%