Nxp Semiconductors BU2525DW BU Transistor NPN SOT 429 (TO 247) 12A 800V BU2525DW 数据表

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

V

CESM

Collector-emitter voltage peak value

V

BE

 = 0

-

1500

V

V

CEO

Collector-emitter voltage

-

800

V

(open base)

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

P

tot

Total power dissipation

T

mb

 

≤

 25 ˚C

-

125

W

V

CEsat

Collector-emitter saturation voltage

I

C

 = 8.0 A; I

B

 = 1.6 A

-

5.0

V

I

Csat

Collector saturation current

8

-

A

t

s

Storage time

I

Csat

 = 8.0 A; I

B(end)

 = 1.1 A

3.0

4.0

µ

s

1

base

2

collector

3

emitter

tab

collector

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

V

CESM

Collector-emitter voltage peak value

V

BE

 = 0 V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

I

B

Base current (DC)

-

8

A

I

BM

Base current peak value

-

12

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

200

mA

-I

BM

Reverse base current peak value 

1

-

9

A

P

tot

Total power dissipation

T

mb

 

≤

  25 ˚C

-

125

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

R

th j-mb

Junction to mounting base

-

-

1.0

K/W

R

th j-a

Junction to ambient

in free air

45

-

K/W

2

3

1

b

c

e

Rbe

1 Turn-off current.

September 1997

1

Rev 1.100