Infineon Technologies N/A BFN 25 PNP Case type SOT 23 I(C) 0 BFN25 数据表
产品代码
BFN25
BFN25, BFN27
Nov-30-2001
2
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BFN25
BFN27
V
(BR)CEO
250
300
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
BFN25
BFN27
V
(BR)CBO
250
300
-
-
-
-
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
V
CB
= 250 V,
I
E
= 0
BFN25
BFN27
I
CBO
-
-
-
-
100
100
nA
Collector cutoff current
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
V
CB
= 250 V,
I
E
= 0 ,
T
A
= 150 °C
BFN25
BFN27
I
CBO
-
-
-
-
20
20
µA
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
BFN25
BFN27
h
FE
25
40
40
30
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
BFN25
BFN27
V
CEsat
-
-
-
-
0.4
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.9
1) Pulse test: t < 300
s; D < 2%