Fairchild Semiconductor N/A TIP110TU 数据表
产品代码
TIP110TU
T
IP
1
10
/T
IP
1
11
/T
IP
1
12
—
N
P
N
E
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xia
l S
ili
c
o
n
D
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to
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T
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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0
2
Electrical Characteristics*
T
a
=25
°C unless otherwise noted
* Pulse Test: Pulse Width
£300ms, Duty Cycle£2%
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: TIP110
: TIP111
: TIP112
: TIP111
: TIP112
I
C
= 30mA, I
B
= 0
60
80
80
100
V
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
: TIP111
: TIP112
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
2
2
mA
mA
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
: TIP111
: TIP112
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
1
1
1
1
1
mA
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
2
mA
h
FE
DC Current Gain
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
1000
500
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 8mA
2.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 4V, I
C
= 2A
2.8
V
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0, f =
0.1MHz
100
pF