Fairchild Semiconductor N/A KSC2383YTA 数据表
产品代码
KSC2383YTA
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC238
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
160
V
V
CEO
Collector-Emitter Voltage
160
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
1
A
I
B
Base Current
0.5
A
P
C
Collector Power Dissipation
900
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=150V, I
E
=0
1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
=6V, I
C
=0
1
µ
A
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0 160
V
h
FE
DC Current Gain
V
CE
=5V, I
C
=200mA 60
320
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA 1.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=5V, I
C
=5mA
0.45
0.75
V
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=200mA
20
100
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
20
pF
Classification R
O
Y
h
FE
60 ~ 120
100 ~ 200
160 ~ 320
KSC2383
Color TV Audio Output & Color TV Vertical
Deflection Output
Deflection Output
TO-92L
1
1. Emitter 2. Collector 3. Base