Rohm Semiconductor EMD12T2R Bipolar Transistor Emitter reverse voltage U(CEO) 50 V EMD12T2R 数据表
产品代码
EMD12T2R
EMD12 / UMD12N
Transistors
Rev.A
1/3
Power management
(dual digital transistors)
(dual digital transistors)
EMD12 / UMD12N
zFeatures
1) Both the DTA144E and DTC144E in a EMT or UMT
package.
zEquivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
R
1
DTr2
DTr1
R
2
R
2
R
1
R
1
=
47k
Ω
R
2
=
47k
Ω
zPackage, marking, and packaging specifications
Type
EMD12
EMT6
D12
T2R
8000
UMD12N
UMT6
D12
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25
°C)
Parameter
∗
1 120mW per element must not be exceeded.
PNP type negative symbols have been omitted
Symbol
V
CC
V
IN
I
O
I
C
Pd
Tj
Tstg
Limits
50
40
−
10
100
30
150(TOTAL)
150
−
55
~
+
150
Unit
V
V
mA
mA
mW
∗
1
°
C
°
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
zExternal dimensions (Units : mm)
Each lead has same dimensions
ROHM : EMT6
EMD12
UMD12N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
0.22
1.2
1.6
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
zElectrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input resistance
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
−
3
−
−
−
−
−
68
32.9
0.8
−
−
−
0.1
−
−
−
−
−
47
−
−
1
0.5
−
0.3
0.18
0.5
−
61.1
1.2
V
V
V
mA
µ
A
−
MHz
k
Ω
∗
R
2
/
R
1
−
250
−
−
V
CC
=
5/
−
5V, I
O
=
100/
−
100
µ
A
V
O
=
0.3/
−
0.3V, I
O
=
2/
−
2mA
I
O
=
10/
−
10mA, I
I
=
0.5/
−
0.5mA
V
I
=
5/
−
5V
V
CC
=
50/
−
50V, V
I
=
0V
I
O
=
5/
−
5mA, V
O
=
5/
−
5V
V
CE
=
10/
−
10V, I
E
=−
5/5mA, f
=
100MHz
∗
Transition frequency of the device. PNP type negative symbols have been omitted
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Resistance ratio