Fairchild Semiconductor N/A MMBT6515 数据表
产品代码
MMBT6515
©2003 Fairchild Semiconductor Corporation
Rev. A. February 2003
MPS
6515/
MMB
T651
5
Absolute Maximum Ratings*
T
C
=25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
* Device mounted on FR-4 PCB 1.6”
×
0.06"
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector current
- Continuous
200
mA
T
J
, T
stg
Junction and Storage Temperature
-55 ~ +150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 0.5mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
=10
µ
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 10
µ
A, I
C
= 0
4.0
V
I
CBO
Collector Cutoff Current
V
CE
= 30V, I
E
= 0
50
nA
I
CBO
Collector Cutoff Current
V
CB
= 30V, I
E
= 0, T = 60
°
C
1.0
µ
A
On Characteristics *
h
FE
DC Current Gain
I
C
= 2.0mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
250
150
150
500
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 50mA, I
B
= 5.0mA
0.5
V
Small Signal Characteristics
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 100kHz
3.5
pF
Symbol
Parameter
Max.
Units
MPS6515
*MMBT6515
P
D
Total Device Dissipation
Derate above 25
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
200
357
°
C/W
MPS6515/MMBT6515
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 3J
TO-92
1
1. Emitter 2. Base 3. Collector