Infineon Technologies HF double transistor array BFS 480 NPN Case type S BFS480 数据表
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产品代码
BFS480
BFS480
2
Jun-27-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
8
-
-
V
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
I
CES
-
-
100
µA
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
µA
DC current gain
I
C
= 3 mA,
V
CE
= 5 V
h
FE
30
100
200
-