Fairchild Semiconductor N/A BDX53CTU 数据表

©2000 Fairchild Semiconductor International

Rev. A, February 2000

T

C

=25

°

C unless otherwise noted 

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW=300

µ

s, duty Cycle =1.5% Pulsed

 V

CBO

 Collector-Base Voltage     : BDX53

: BDX53A
: BDX53B
: BDX53C

 45
 60
 80

100

V
V
V
V

 V

CEO

 Collector-Emitter Voltage  : BDX53

: BDX53A
: BDX53B
: BDX53C

 45
 60
 80

100

V
V
V
V

 

V

EBO

 Emitter-Base Voltage

  5

V

 I

C

 Collector Current (DC)

  8

A

 I

CP

 *Collector Current (Pulse)

 12

A

 I

B

 Base Current

0.2

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

 60

W

 T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

: BDX53
: BDX53A
: BDX53B
: BDX53C

 I

C 

= 100mA, I

B 

= 0

 45
 60
 80

100

V
V
V
V

 I

CBO

 Collector Cut-off Current   : BDX53

: BDX53A
: BDX53B
: BDX53C

 V

CB 

= 45V, I

E 

= 0

 V

CB 

= 60V, I

E 

= 0

 V

CB 

= 80V, I

E 

= 0

 V

CB 

= 100V, I

E 

= 0

200
200
200
200

µ

A

µ

A

µ

A

µ

A

 I

CEO

 Collector Cut-off Current   : BDX53

: BDX53A
: BDX53B
: BDX53C

 V

CE 

= 22V, I

B 

= 0

 V

CE 

= 30V, I

B 

= 0

 V

CE 

= 40V, I

B 

= 0

 V

CE 

= 50V, I

B 

= 0

500
500
500
500

µ

A

µ

A

µ

A

µ

A

 

I

EBO

 Emitter Cut-off Current

 V

EB 

= 5V, I

C 

= 0

2

mA

 

h

FE

* DC Current Gain

 V

CE 

= 3V, I

C 

= 3A

750

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= 3A, I

B 

= 12mA

  2

V

 V

BE

(sat)

* Base-Emitter Saturation Voltage             

 I

C 

= 3A, I

B 

= 12mA

2.5

V

 V

F

* Parallel Diode Forward Voltage

 I

F

= 3A

 I

F

= 8A

1.8
2.5

2.5

V
V

• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively

1.Base    2.Collector    3.Emitter

1

TO-220