Fairchild Semiconductor N/A BDW93CTU 数据表

©2000 Fairchild Semiconductor International

Rev. A, February 2000

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

 V

CBO

 Collector-Base Voltage

: BDW93
: BDW93A
: BDW93B
: BDW93C

 45
 60
 80

100

V
V
V
V

 V

CEO

 Collector-Emitter Voltage

: BDW93
: BDW93A
: BDW93B
: BDW93C

 45
 60
 80

100

V
V
V
V

 I

C

 Collector Current (DC)

 12

A

 I

CP

 *Collector Current (Pulse)

 15

A

 I

B

 Base Current

0.2

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

 80

W

 T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

R

θ

jc

Thermal Resistance

        Junction to Case

1.5

°

C/W

• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively

1.Base    2.Collector    3.Emitter

1

TO-220