Fairchild Semiconductor N/A FSB560A 数据表
产品代码
FSB560A
F
S
B
5
6
0
/F
S
B
5
6
0
A
—
N
N
P
N
L
o
w
S
a
tu
ra
tio
n
T
ra
n
s
is
to
r
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSB560/FSB560A Rev. B2
1
May 2009
FSB560/FSB560A
NPN Low Saturation Transistor
NPN Low Saturation Transistor
Features
• These devices are designed with high current gain and low saturation voltage with
collector currents up to 2A continuous.
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150
1)These ratings are based on a maximum junction temperature of 150
°
C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current - Continuous
2
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
- 55 to +150
°C
Symbol
Parameter
Max.
Units
FSB560
FSB560A
P
D
Total Device Dissipation
500
mW
R
θJA
Thermal Resistance, Junction to Ambient
250
°C/W
B
E
C