Fairchild Semiconductor N/A MJE340STU 数据表

©2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

 V

CBO

 Collector-Base Voltage

300

V

 V

CEO

 Collector-Emitter Voltage

300

V

 

V

EBO

 Emitter-Base Voltage

  5

V

 

I

C

 Collector Current

500

mA

 

P

C

 Collector Dissipation (T

C

=25

°

C)

 20

W

 

T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 BV

CEO

 Collector-Emitter Breakdown Voltage

 I

C 

= 1mA, I

B 

= 0

300

V

 I

CBO

 Collector Cut-off Current

 V

CB 

= 300V, I

E 

=0

100

µ

A

 I

EBO

 Emitter Cut-off Current

 V

BE 

= 3V, I

C 

= 0

100

µ

A

 h

FE

 DC Current Gain

 V

CE 

= 10V, I

C 

= 50mA

30

240

• High Collector-Emitter Breakdown Voltage 
• Suitable for Transformer
• Complement to MJE350

1

TO-126

1. Emitter    2.Collector    3.Base