Fairchild Semiconductor N/A BD236STU 数据表

©2000 Fairchild Semiconductor International

Rev. A, February 2000

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW=300

µ

s, duty Cycle=1.5% Pulsed

 V

CBO

 Collector-Base Voltage

: BD234
: BD236
: BD238

 - 45
 - 60

- 100

V
V
V

 V

CEO

 Collector-Emitter Voltage

: BD234
: BD236
: BD238

 - 45
 - 60
 - 80

V
V
V

 

V

CER

 Collector-Emitter Voltage

: BD234
: BD236
: BD238

 - 45
 - 60

- 100

V
V
V

 

V

EBO

 Emitter-Base Voltage

  - 5

V

 

I

C

 Collector Current (DC)

  - 2

A

 

I

CP

 *Collector Current (Pulse)

  - 6

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

  25

W

 T

J

 Junction Temperature

 150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

: BD234
: BD236
: BD238

 I

C 

= - 100mA, I

B 

= 0

- 45
- 60
- 80

V
V
V

 I

CBO

 Collector Cut-off Current

: BD234
: BD236
: BD238

 
V

CB 

= - 45V, I

E 

= 0

 V

CB 

= - 60V, I

E 

= 0

 V

CB 

= - 100V, I

E 

= 0

- 100
- 100
- 100

µ

A

µ

A

µ

A

 

I

EBO

 Emitter Cut-off Current

 V

EB 

= - 5V, I

C 

= 0

 - 1

mA

 

h

FE

* DC Current Gain

 V

CE 

= - 2V, I

C 

= - 150mA

 V

CE 

= - 2V, I

C 

= - 1A 

 40
 25

 

V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= - 1A , I

B 

= - 0.1A

- 0.6

V

 V

BE

(on)

* Base-Emitter ON Voltage

 V

CE 

= - 2V, I

C 

= - 1A

- 1.3

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= - 10V, I

C 

=  -250mA

  3

MHz

• Complement to BD 233/235/237 respectively

1

TO-126

1. Emitter    2.Collector    3.Base