Fairchild Semiconductor N/A MJE200STU 数据表

©2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

 V

CBO

 Collector-Base Voltage

 40

V

 V

CEO

 Collector-Emitter Voltage

 25

V

 

V

EBO

 Emitter- Base Voltage

  8

V

 

I

C

 Collector Current

  5

A

 

P

C

 Collector Dissipation (T

C

=25

°

C)

 15

W

 

T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 BV

CEO

 Collector-Emitter Breakdown Voltage

 I

C

=10mA, I

B

=0

25

V

 I

CBO

 Collector Cut-off Current

 V

CB

=40V, I

E

=0

 V

CB

=40V, I

E

=0 @ T

J

=125

°

C

100
100

nA

µ

A

 

I

EBO

 Emitter Cut-off Current

 V

BE

=8V, I

C

=0

100

nA

 

h

FE

 DC Current Gain

 V

CE

=1V, I

C

=500mA

 V

CE

=1V, I

C

=2A

 V

CE

=2V, I

C

=5A

70
45
10

180

 V

CE

(sat)

 Collector-Emitter Saturation Voltage

 I

C

=500mA, I

B

=50mA

 I

C

=2A, I

C

=200mA

 I

C

=5A, I

B

=1A

0.3

  0.75

1.8

V
V
V

 V

BE

(sat)

 Base- Emitter Saturation Voltage

 I

C

=5A, I

B

=1A

2.5

V

 V

BE

(on)

 Base-Emitter ON Voltage

 V

CE

=1V, I

C

=2A

1.6

V

 f

T

 Current Gain Bandwidth Product

 V

CE

=10V, I

C

=100mA

65

MHz

 C

ob

 Output Capacitance

 V

CB

=10V, I

E

=0, f=0.1MHz

80

pF

• Low Collector-Emitter Saturation Voltage 
• High Current Gain Bandwidth Product : f

T

=65MHz @ I

C

=100mA (Min.)

• Complement to MJE210

1

TO-126

1. Emitter    2.Collector    3.Base