Fairchild Semiconductor N/A KSP94TA 数据表

©2002 Fairchild Semiconductor Corporation

Rev. A2, July 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CBO

Collector-Base Voltage

-400

V

V

CEO

Collector-Emitter Voltage

-400

V

V

EBO

Emitter-Base Voltage

-6

V

I

C

Collector Current

-300

mA

P

C

Collector Power Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55~150

°

C

BV

CBO

Collector-Base Breakdown Voltage

I

C

= -100

µ

A, I

E

=0

-400

V

BV

CES

Collector-Emitter Breakdown Voltage

I

C

= -100

µ

A, V

BE

=0

-400

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= -10

µ

A, I

C

=0

-6

V

I

CBO

Collector Cut-off Current

V

CB

= -300V, V

E

=0

-100

nA

I

CES

Collector Cut-off Current

V

CE

= -400V, V

BE

=0V

-1

µ

A

I

EBO

Emitter Cut-off Current

V

BE

= -4V, I

C

=0

-100

nA

h

FE1

h

FE2

h

FE3

h

FE4

DC Current Gain

V

CE

= -10V, I

C

= -1mA

V

CE

= -10V, I

C

= -10mA

V

CE

= -10V, I

C

= -50mA

V

CE

= -10V, I

C

= -100mA

40
50
45
40

300

V

CE 

(sat)

1

V

CE 

(sat)

2

Collector-Emitter Saturation Voltage

I

C

= -10mA, I

B

= -1mA 

I

C

= -50mA, I

B

= -5mA

-500
-750

mV
mV

V

BE 

(sat)

Base-Emitter Saturation Voltage

I

C

= -10mA, I

B

= -1mA

-750

mV

C

ob

Output Capacitance

V

CB

= -20V, I

E

=0, f=1MHz

7

pF

• High Collector-Emitter Voltage: V

CEO

= -400V

• Low Collector-Emitter Saturation Voltage
• Complement to KSP44

1. Emitter   2. Base   3. Collector

TO-92

1