Fairchild Semiconductor N/A PZTA06 数据表
产品代码
PZTA06
MP
SA0
6
/ MMBT
A0
6 / P
6 / P
Z
T
A
06 — NP
N General P
u
rpose Amplifier
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. B0
3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector Saturation Region
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
50
100
150
200
I - COLLECTOR CURRENT (A)
h
-
T
Y
P
IC
A
L
PU
L
SED
C
U
R
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V = 1V
CE
125 °C
Collector-Emitt er Saturation
Voltage vs Collect or Curre nt
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
V
- C
O
L
L
EC
T
O
R
EM
IT
T
E
R
V
O
L
TA
G
E (
V
)
C
CE
S
A
T
β
= 10
- 40 °C
25 °C
125 °C
β
Base-Emitt er Saturation
Voltage vs Collect or Current
0.1
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
SE
E
M
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
BE
S
A
T
β
= 10
- 40 °C
25 °C
125 °C
β
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
- 40 °C
25 °C
125 °C
Collect or-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.001
0.01
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I
- C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
CBO
°
V = 80 V
CB
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
=500mA
I
C
=250mA
I
C
=100mA
I
C
=50mA
Collector Saturation Region
I
C
=10mA
V
CE(SAT)
, Collector Emitter Voltage (V)
I
B
- Base Current (mA)