Fairchild Semiconductor N/A PN2222TF 数据表

©2004 Fairchild Semiconductor Corporation

Rev. A, November 2004

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

* Pulse Test: Pulse Width

≤

300

µ

s, Duty Cycle

≤

2%

V

CBO

Collector-Base Voltage

60

V

V

CEO

Collector-Emitter Voltage

30

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

600

mA

P

C

Collector Power Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

BV

CBO

Collector-Base Breakdown Voltage

I

C

=10

µ

A, I

E

=0

60

V

BV

CEO

Collector Emitter Breakdown Voltage

I

C

=10mA, I

B

=0

30

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=10

µ

A, I

C

=0

5

V

I

CBO

Collector Cut-off Current

V

CB

=50V, I

E

=0

0.01

µ

A

I

EBO

Emitter Cut-off Current

V

EB

=3V, I

C

=0

10

nA

h

FE

DC Current Gain

V

CE

=10V, I

C

=0.1mA

V

CE

=10V, *I

C

=150mA

35

100

300

V

CE 

(sat)

* Collector-Emitter Saturation Voltage

I

C

=500mA, I

B

=50mA  

1

V

V

BE 

(sat)

* Base-Emitter Saturation Voltage

I

C

=500mA, I

B

=50mA 2

V

f

T

Current Gain Bandwidth Product

V

CE

=20V,  I

C

=20mA, f=100MHz 

300

MHz

C

ob

Output Capacitance

V

CB

=10V, I

E

=0, f=1MHz 

8

pF

1. Emitter   2. Base   3. Collector

TO-92

1