Fairchild Semiconductor N/A KST5087MTF 数据表

©2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CBO

Collector-Base Voltage

-50

V

V

CEO

Collector-Emitter Voltage

-50

V

V

EBO

Emitter-Base Voltage

-3

V

I

C

Collector Current

-50

mA

P

C

Collector Power Dissipation

350

mW

T

STG

Storage Temperature

150

°

C

BV

CBO

Collector-Base Breakdown Voltage

I

C

= -100

µ

A, I

E

=0

-50

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

= -1mA, I

B

=0

-50

V

I

CBO

Collector Cut-off Current

V

CB

= -20V, I

E

=0

-50

nA

h

FE

DC Current Gain                

: KST5086
: KST5087                                                                              
: KST5086
: KST5087
: KST5086
: KST5087

V

CE

= -5V, I

C

= -100

µ

A

V

CE

= -5V, I

C

= -1mA

V

CE

= -5V, I

C

= -10mA

150
250
150
250
150
250

500
800

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

= -10mA, I

B

= -1mA

-0.3

V

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C

= -10mA, I

B

= -1mA

-0.85

V

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -500

µ

A

f=20MHz

40

MHz

C

ob

Output Capacitance

V

CB

= -5V, I

E

=0

f=100MHz

4

pF

NF

Noise Figure

: KST5086
: KST5087
: KST5087

I

C

= -100

µ

A, V

CE

= -5V

R

S

=3K

Ω

, f=1KHz

V

CE

= -5V, I

C

= -20mA

R

S

=10K

Ω

,

 

f=10Hz to 15.7KHz

3
2
2

dB
dB
dB

Type

KST5086

KST5087

Mark

2P

2Q

Marking

1. Base   2. Emitter   3. Collector

SOT-23

1

2

3