Kingston Technology 3GB, 1066MHz, DDR3, ECC, CL7, DIMM (Kit of 3) KVR1066D3E7K3/3G 数据表

产品代码
KVR1066D3E7K3/3G
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Memory Module Specifications
KVR1066D3E7K3/3G
3GB (1GB 128M x 72-Bit x 3 pcs.) PC3-8500
CL7 ECC 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0858-001.A00   09/18/09   Page 1
DESCRIPTION
ValueRAM’s KVR1066D3E7K3/3G is a kit of three 128M x 
72-bit 1GB (1024MB) DDR3-1066 CL7 SDRAM (Synchronous 
DRAM) ECC memory modules, based on nine 128M x 8-bit 
DDR3-1066 FBGA components per module. Total kit capac-
ity is 3GB. The SPDs are programmed to JEDEC standard 
latency 1066Mhz timing of 7-7-7 at 1.5V. Each 240-pin DIMM 
uses gold contact fingers and requires +1.5V. The electrical 
and mechanical specifications are as follows:
FEATURES
•  JEDEC standard 1.5V ± 0.075V Power Supply
•  VDDQ = 1.5V ± 0.075V
•  533MHz fCK for 1066Mb/sec/pin
•  8 independent internal bank
•  Programmable CAS Latency: 5,6,7,8,9,10
•  Posted CAS
•  Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•  Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
•  8-bit pre-fetch
•  Burst Length: 8 (Interleave without any limit, sequential with 
starting address “000” only), 4 with tCCD = 4 which does  
not allow seamless read or write [either on the fly using A12 
or MRS]
•  Bi-directional Differential Data Strobe
•  Internal(self) calibration : Internal self calibration through ZQ 
pin (RZQ : 240 ohm ± 1%)
•  On Die Termination using ODT pin
•  Average Refresh Period 7.8us at lower than TCASE 85°C, 
3.9us at 85°C < TCASE ≤ 95°C
•  Asynchronous Reset
•  1066Mbps CL7 doesn’t have backward compatibility with 
800Mbps CL5
•  PCB : Height 1.180” (30.00mm), single sided component
SPECIFICATIONS
CL(IDD)  
7 cycles
Row Cycle Time (tRCmin)  
50.63ns (min.)
Refresh to Active/Refresh  
110ns 
Command Time (tRFCmin)
Row Active Time (tRASmin)  
37.5ns (min.)
Power  
1.147 W (operating per module)
UL Rating  
94 V - 0
Operating Temperature  
0° C to 85° C
Storage Temperature  
-55° C to +100° C
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