Kingston Technology 2GB, 1066MHz, DDR3, ECC Reg w/Parity CL7, DIMM Single Rank, x4 w/Therm Sen KVR1066D3S4R7S/2G 数据表
产品代码
KVR1066D3S4R7S/2G
Memory Module Specifications
KVR1066D3S4R7S/2G
2GB 256M x 72-Bit PC3-8500
CL7 Registered w/Parity 240-Pin DIMM
CL7 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0754-001.A00 01/08/09 Page 1
DESCRIPTION
This document describes ValueRAM’s 256M x 72-bit 2GB
(2048MB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
registered w/parity, single-rank memory module, based on
eighteen 256M x 4-bit DDR3-1066 FBGA components. The
SPD is programmed to JEDEC standard latency 1066Mhz
timing of 7-7-7 at 1.5V. This 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
(2048MB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
registered w/parity, single-rank memory module, based on
eighteen 256M x 4-bit DDR3-1066 FBGA components. The
SPD is programmed to JEDEC standard latency 1066Mhz
timing of 7-7-7 at 1.5V. This 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 4 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 4 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.625ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
3.195 W (operating)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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