Kingston Technology 6GB, 1333MHz, DDR3, ECC Reg w/Par, CL9, DIMM (Kit of 3) SR KVR1333D3S4R9SK3/6G 数据表
产品代码
KVR1333D3S4R9SK3/6G
Memory Module Specifications
KVR1333D3S4R9SK3/6G
6GB (2GB 256M x 72-Bit x 3 pcs.) PC3-10600
CL9 Registered w/Parity 240-Pin DIMM Kit
CL9 Registered w/Parity 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0856-001.A00 09/18/09 Page 1
DESCRIPTION
ValueRAM’s KVR1333D3S4R9SK3/6G is a kit of three 256M
x 72-bit 2GB (2048MB) DDR3-1333MHz CL9 SDRAM (Syn-
chronous DRAM) registered w/parity, single-rank memory
modules, based on eighteen 256M x 4-bit DDR3-1333 FBGA
components per module. Total kit capacity is 6GB. The SPDs
are programmed to JEDEC standard latency 1333MHz timing of
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and
requires +1.5V. The electrical and mechanical specifications are
as follows:
x 72-bit 2GB (2048MB) DDR3-1333MHz CL9 SDRAM (Syn-
chronous DRAM) registered w/parity, single-rank memory
modules, based on eighteen 256M x 4-bit DDR3-1333 FBGA
components per module. Total kit capacity is 6GB. The SPDs
are programmed to JEDEC standard latency 1333MHz timing of
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and
requires +1.5V. The electrical and mechanical specifications are
as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• On-DIMM thermal sensor (Grade B)
• Internal(self) calibration : Internal self calibration through ZQ
• On-DIMM thermal sensor (Grade B)
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
110ns
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power
3.885 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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