Kingston Technology ValueRAM memory 4 GB ( 2 x 2 GB ) DIMM 240-pin DDR3 KVR1066D3E7SK2/4GI 数据表
产品代码
KVR1066D3E7SK2/4GI
Memory Module Specifications
KVR1066D3E7SK2/4GI
4GB (2GB 256M x 72-Bit x 2 pcs.) PC3-8500
CL7 ECC 240-Pin DIMM Kit
CL7 ECC 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0775-001.A00 04/27/09 Page 1
DESCRIPTION
ValueRAM’s KVR1066D3E7SK2/4GI is a kit of two 256M x 72-bit
2GB (2048MB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
ECC, Intel
2GB (2048MB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
ECC, Intel
®
Compatibility Tested, memory modules, based on
eighteen 128M x 8-bit DDR3-1066 FBGA components. Total kit
capacity is 4GB (4096MB). Each module’s SPD is programmed to
JEDEC standard latency 1066Mhz timing of 7-7-7 at 1.5V. Each
240-pin DIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
capacity is 4GB (4096MB). Each module’s SPD is programmed to
JEDEC standard latency 1066Mhz timing of 7-7-7 at 1.5V. Each
240-pin DIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not al-
low seamless read or write [either on the fly using A12 or MRS]
low seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• 1066Mbps CL7 doesn’t have backward compatibility with
• 1066Mbps CL7 doesn’t have backward compatibility with
800Mbps CL5
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.63ns (min.)
Refresh to Active/Refresh
110ns
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
1.890 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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