Kingston Technology 2GB, 1800MHz, DDR3, Non-ECC, CL8 (8-8-8-24), DIMM, (Kit of 2), Tall HS KHX1800C8D3T1K2/2G 数据表

Document No. 4805269-001.A00

07/24/09

Page 1

Kingston's KHX1800C8D3T1K2/2G is a kit of two 128M x 64-bit 1GB (1024MB) DDR3-1800MHz CL8 SDRAM
(Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module. Total kit
capacity is 2GB. Each module kit has been tested to run at DDR3-1800MHz at a low latency timing of 8-8-8-24 at 1.9V.
The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as
follows:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

667MHz fCK for 1333Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 5,6,7,8,9,10

Posted CAS

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7(DDR3-1333)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

which does not allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 2.401” (61.00mm) w/ heatsink, single  sided  component

CL(IDD)

9 cycles

Row Cycle Time (tRCmin)

49.5ns (min.)

Refresh to Active/Refresh Command Time (tRFCmin)

110ns

Row Active Time (tRASmin)

36ns (min.)

Power

1.080 W (operating per module)

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

Keyed

Keyed