Kingston Technology 4GB DDR3 204-pin SODIMM Kit KHX1066C5S3K2/4GX 数据表

Document No. 4805394-001.B00

11/11/09

Page 1

Kingston's KHX1066C5D3K2/4GX is a kit of two 256M x 64-bit 2GB (2048MB) DDR3-1066MHz CL5 SDRAM
(Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Each
module kit supports Intel

 XMP (Extreme Memory Profiles). Total kit capacity is 4GB. Each module pair has been tested

to run at DDR3-1066MHz at a low latency timing of 5-5-5-15 at 1.5V. The SPDs are programmed to JEDEC standard
latency DDR3-1066MHz timing of 7-7-7 at 1.5V. Each 204-pin SODIMM uses gold contact fingers and requires +1.5V.
The JEDEC standard electrical and mechanical specifications are as follows:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

533MHz fCK for 1066Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 6,7,8,9

Posted CAS

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 6(DDR3-1066)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 1.180” (30.00mm), double  sided  component

CL(IDD)

7 cycles

Row Cycle Time (tRCmin)

50.63ns (min.)

Refresh to Active/Refresh Command Time (tRFCmin)

110ns

Row Active Time (tRASmin)

37.5ns (min.)

Power

1.680 W (operating per module)

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C