Kingston Technology Memory HyperX 1GB 400MHz DDR KHX3200A/1G 产品宣传页
产品代码
KHX3200A/1G
Memory Module Specification
Document No. 4804282-001.A00
09/15/05
KHX3200A/1G
1GB 128M x 64-Bit PC3200
CL2 184-Pin DIMM
KEY
ED
Page 1
DESCRIPTION:
This document describes Kingston's 128M x 64-bit 1GB (1024MB) DDR400 SDRAM (Synchronous
DRAM) CL2 memory module. The components on this module include sixteen 64M x 8-bit (16M x
8-bit x 4 Bank) DDR400 SDRAM in TSOP packages. This 184-pin DIMM uses gold contact fingers
and requires +2.6V. The electrical and mechanical specifications are as follows:
DRAM) CL2 memory module. The components on this module include sixteen 64M x 8-bit (16M x
8-bit x 4 Bank) DDR400 SDRAM in TSOP packages. This 184-pin DIMM uses gold contact fingers
and requires +2.6V. The electrical and mechanical specifications are as follows:
FEATURES:
Power supply : Vdd: 2.6V ± 0.2V, Vddq: 2.6V ± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Timing Reference: 2-3-2-6-1 at +2.6V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.250” (34.75mm), double sided component
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Timing Reference: 2-3-2-6-1 at +2.6V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.250” (34.75mm), double sided component
PERFORMANCE:
Clock Cycle Time (tCK)
5ns (min.) / 10ns (max.)
Row Cycle Time (tRC)
55ns (min.)
Refresh Row Cycle Time (tRFC) 65ns (min.)
Row Active Time (tRAS)
Row Active Time (tRAS)
40ns (min.) / 100,000ns (max.)
Power
3.825 W (operating)
UL Rating
94 V - 0
Operating Temperature
0
o
C to 70
o
C
Storage Temperature
-55
o
C to +150
o
C
T E C H N O L O G Y