Kingston Technology KHX1333C7S3K2/4G 数据表

Kingston's KHX1300C7S3K2/4G is a kit of two 256M x 64-bit

(2GB) DDR3-1333MHz CL7 SDRAM (Synchronous DRAM)

1Rx8 memory modules, based on eight 256M x 8-bit DDR3

FBGA components per module. Total kit capacity is 4GB. Each

module kit has been tested to run at DDR3-1333MHz at a low

latency timing of 7-7-7-20 at 1.5V. Each 204-pin SODIMM uses

gold contact fingers and requires +1.5V. The electrical and

mechanical specifications are as follows:

CL(IDD)

7 cycles

Row Cycle Time (tRCmin)

49.5ns (min.)

Refresh to Active/Refresh

160ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

30ns (min.)

Power (Operating)

0.795* (per module)

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

*Power will vary depending on the SDRAM used.

•

JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply

•

VDDQ = 1.5V (1.425V ~ 1.575V)

•

667MHz fCK for 1333Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 9, 8, 7, 6

•

Posted CAS

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

•

Bi-directional Differential Data Strobe

•

Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB : Height 1.180” (30.00mm), double  sided  component

Memory Module Specifi cations

4GB (2GB 256M x 64-Bit x 2 pcs.)
DDR3-1333 CL7 204-Pin SODIMM Kit

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