Nxp Semiconductors PBLS4004D User Manual

PNP low V

CEsat

 Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.

n

Low V

CEsat

 (BISS) and resistor-equipped transistor in one package

n

Low threshold voltage (< 1 V) compared to MOSFET

n

Low drive power required

n

Space-saving solution

n

Reduction of component count

n

Supply line switches

n

Battery charger switches

n

High-side switches for LEDs, drivers and backlights

n

Portable equipment

[1]

Device mounted on a ceramic Printed-Circuit Board (PCB), Al

2

O

3

, standard footprint.

[2]

Pulse test: t

p

≤

300

µ

s;

δ ≤

0.02.

V

CEO

collector-emitter voltage

open base

-

-

−

40

V

I

C

collector current

-

-

−

1

A

R

CEsat

collector-emitter saturation
resistance

I

C

=

−

500 mA;

I

B

=

−

50 mA

-

240

340

m

Ω

V

CEO

collector-emitter voltage

open base

-

-

50

V

I

O

output current

-

-

100

mA

R1

bias resistor 1 (input)

15.4

22

28.6

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2