Nxp Semiconductors PBLS4004D User Manual

PBLS4004D_3

© NXP B.V. 2009. All rights reserved.

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm

2

.

[3]

Device mounted on a ceramic PCB, Al

2

O

3

, standard footprint.

P

tot

total power dissipation

T

amb

≤

25

°

C

-

250

mW

-

350

mW

-

400

mW

V

CBO

collector-base voltage

open emitter

-

50

V

V

CEO

collector-emitter voltage

open base

-

50

V

V

EBO

emitter-base voltage

open collector

-

10

V

V

I

input voltage

positive

-

+40

V

negative

-

−

10

V

I

O

output current

-

100

mA

I

CM

peak collector current

single pulse; t

p

≤

1 ms

-

100

mA

P

tot

total power dissipation

T

amb

≤

25

°

C

-

200

mW

P

tot

total power dissipation

T

amb

≤

25

°

C

-

400

mW

-

530

mW

-

600

mW

T

j

junction temperature

-

150

°

C

T

amb

ambient temperature

−

65

+150

°

C

T

stg

storage temperature

−

65

+150

°

C

 …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).