Atmel ARM-Based Evaluation Kit for SAM4S16C, 32-Bit ARM® Cortex® Microcontroller ATSAM4S-WPIR-RD ATSAM4S-WPIR-RD Data Sheet

SAM4S Series [DATASHEET]

Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14

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GPNVM bits do not interfere with the embedded Flash memory plane. Refer to specific product details for 

information on GPNVM bit action.
The Set GPNVM bit sequence is:



Start the Set GPNVM bit command (SGPB) by writing EEFC_FCR with the SGPB command and the number 

of the GPNVM bits to be set.



When the GPNVM bit is set, the bit FRDY in EEFC_FSR rises. If an interrupt was enabled by setting the 

FRDY bit in EEFC_FMR, the interrupt line of the interrupt controller is activated.



The result of the SGPB command can be checked by running a Get GPNVM bit (GGPB) command.

Note:

The value of the FARG argument passed together with SGPB command must not exceed the higher GPNVM index 

available in the product. Flash data content is not altered if FARG exceeds the limit. Command Error is detected only if 

FARG is greater than 8.

Two errors can be detected in EEFC_FSR after a programming sequence: 



Command Error: a bad keyword has been written in EEFC_FCR.



Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash memory has 

failed.

It is possible to clear GPNVM bits previously set. The Clear GPNVM bit sequence is:



Start the Clear GPNVM bit command (CGPB) by writing EEFC_FCR with CGPB and the number of the 

GPNVM bits to be cleared.



When the clear completes, the FRDY bit in EEFC_FSR rises. If an interrupt has been enabled by setting the 

FRDY bit in EEFC_FMR, the interrupt line of the interrupt controller is activated.

Note:

The value of the FARG argument passed together with CGPB command must not exceed the higher GPNVM index 

available in the product. Flash data content is not altered if FARG exceeds the limit. Command Error is detected only if 

FARG is greater than 8.

Two errors can be detected in EEFC_FSR after a programming sequence: 



Command Error: a bad keyword has been written in EEFC_FCR.



Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash memory has 

failed.

The status of GPNVM bits can be returned by the EEFC. The sequence is:



Start the Get GPNVM bit command by writing EEFC_FCR with GGPB. The FARG field is meaningless.



GPNVM bits can be read by the software application in EEFC_FRR. The first word read corresponds to the 

32 first GPNVM bits, following reads provide the next 32 GPNVM bits as long as it is meaningful. Extra reads 

to EEFC_FRR return 0.

For example, if the third bit of the first word read in EEFC_FRR is set, then the third GPNVM bit is active.
One error can be detected in EEFC_FSR after a programming sequence: 



Command Error: a bad keyword has been written in EEFC_FCR.

Note:

Access to the Flash in read is permitted when a set, clear or get GPNVM bit command is performed.

Calibration bits do not interfere with the embedded Flash memory plane.
The calibration bits cannot be modified.
The status of calibration bits are returned by the EEFC. The sequence is:



Issue the Get CALIB bit command by writing EEFC_FCR with GCALB (see 

). The FARG field is 

meaningless.