Nxp Semiconductors BU2507AF BU Transistor NPN SOT 199 8A 700V BU2507AF Data Sheet
Product codes
BU2507AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.95 A
-
1.0
V
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
5.0
V
I
Csat
Collector saturation current
f = 16kHz
4
-
A
t
f
Fall time
I
Csat
= 4 A; f = 16kHz
0.25
0.5
µ
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-
5
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
1
2
3
case
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.100