Nxp Semiconductors BU2507AF BU Transistor NPN SOT 199 8A 700V BU2507AF Data Sheet
Product codes
BU2507AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEsat
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
17
-
h
FE
I
C
= 4 A; V
CE
= 5 V
5.0
7.0
9.0
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
68
-
pF
Switching times (16 kHz line
I
Csat
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V
t
s
Turn-off storage time
5.0
6.0
µ
s
t
f
Turn-off fall time
0.25
0.5
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100