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STM32L15xCC STM32L15xRC STM32L15xUC STM32L15xVC
Electrical characteristics
111
6.3.3 Embedded 
internal reference voltage
The parameters given in 
 are based on characterization results, unless otherwise 
specified.
          
           
Table 16. Embedded internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at 
temperature of 30 °C ±5 °C
V
DDA
= 3 V ±10 mV
0x1FF8 00F8 - 0x1FF8 00F9
Table 17. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
 
Max
Unit
V
REFINT out
(1)
Internal reference voltage
– 40 °C < T
J
 < +105 °C 1.202
1.224
1.242
V
I
REFINT
Internal reference current 
consumption
-
-
1.4
2.3
µA
T
VREFINT
Internal reference startup time
-
-
2
3
ms
V
VREF_MEAS
V
DDA
 and V
REF+
 voltage during 
V
REFINT
 factory measure
-
2.99
3
3.01
V
A
VREF_MEAS
Accuracy of factory-measured 
V
REF
 value
(2)
Including uncertainties 
due to ADC and 
V
DDA
/V
REF+
 values
-
-
±5
mV
T
Coeff
(3)
Temperature coefficient
–40 °C < T
J
 < +105 °C
-
20
50
ppm/°C
0 °C < T
J
 < +50 °C
-
-
20
A
Coeff
Long-term stability
1000 hours, T= 25 °C
-
-
1000
ppm
V
DDCoeff
Voltage coefficient
3.0 V < V
DDA
 < 3.6 V
-
-
2000
ppm/V
T
S_vrefint
ADC sampling time when 
reading the internal reference 
voltage
-
5
10
-
µs
T
ADC_BUF
Startup time of reference 
voltage buffer for ADC
-
-
-
10
µs
I
BUF_ADC
Consumption of reference 
voltage buffer for ADC
-
-
13.5
25
µA
I
VREF_OUT
VREF_OUT output current
(5)
-
-
-
1
µA
C
VREF_OUT
VREF_OUT output load
-
-
-
50
pF
I
LPBUF
Consumption of reference 
voltage buffer for VREF_OUT 
and COMP 
-
-
730
1200
nA
V
REFINT_DIV1
1/4 reference voltage
-
24
25
26
V
REFINT
V
REFINT_DIV2
1/2 reference voltage
-
49
50
51
V
REFINT_DIV3
3/4 reference voltage
-
74
75
76
1. Tested in production.
2. The internal V
REF
 value is individually measured in production and stored in dedicated EEPROM bytes.